IXTH1N200P3 MOSFET Transistor

The IXTH1N200P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH1N200P3 transistor as follows.

IXTH1N200P3 Transistor Specification

Transistor Code		IXTH1N200P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247HV
Drain-Source Voltage (Maximum)	VDS	2000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	40Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		4V

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