IXTA88N085T7 MOSFET Transistor

The IXTA88N085T7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA88N085T7 transistor as follows.

IXTA88N085T7 Transistor Specification

Transistor Code		IXTA88N085T7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	85V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	88A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	230W
Operating Junction Temperature (Maximum)		175°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		69nC

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