BRB7N65 MOSFET Transistor

The BRB7N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRB7N65 transistor as follows.

BRB7N65 Transistor Specification

Transistor Code		BRB7N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	147W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS

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