IRLW640A MOSFET Transistor

The IRLW640A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLW640A transistor as follows.

IRLW640A Transistor Specification

Transistor Code		IRLW640A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		1310pF
Operating Junction Temperature (Maximum)		150°C

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