IXFN72N55Q2 MOSFET Transistor

The IXFN72N55Q2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN72N55Q2 transistor as follows.

IXFN72N55Q2 Transistor Specification

Transistor Code		IXFN72N55Q2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	550V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	72A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.072Ohm
Power Dissipation (Maximum)	PD	890W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		270nC

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