IXFN130N30 MOSFET Transistor

The IXFN130N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN130N30 transistor as follows.

IXFN130N30 Transistor Specification

Transistor Code		IXFN130N30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	700W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		555nC

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