IXFN21N100Q MOSFET Transistor

The IXFN21N100Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN21N100Q transistor as follows.

IXFN21N100Q Transistor Specification

Transistor Code		IXFN21N100Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	521W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		170nC

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