IXFN27N80 MOSFET Transistor

The IXFN27N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN27N80 transistor as follows.

IXFN27N80 Transistor Specification

Transistor Code		IXFN27N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	520W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		350nC

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