IXFN23N100 MOSFET Transistor

The IXFN23N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN23N100 transistor as follows.

IXFN23N100 Transistor Specification

Transistor Code		IXFN23N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.43Ohm
Power Dissipation (Maximum)	PD	595W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		250nC

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