IXTN120N25 MOSFET Transistor

The IXTN120N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN120N25 transistor as follows.

IXTN120N25 Transistor Specification

Transistor Code		IXTN120N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	730W
Operating Junction Temperature (Maximum)		150°C
Rise Time		350nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		360nC

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