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IXFH22N55 MOSFET Transistor

The IXFH22N55 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH22N55 transistor as follows.

Circuit diagram symbol of the IXFH22N55 transistor

IXFH22N55 Transistor Specification

Transistor Code IXFH22N55
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 550V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 22A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.27Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 150nC

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