IXTH50N30 MOSFET Transistor

The IXTH50N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH50N30 transistor as follows.

IXTH50N30 Transistor Specification

Transistor Code		IXTH50N30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	400W
Operating Junction Temperature (Maximum)		150°C
Rise Time		360nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		165nC

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