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IXTH6N120 MOSFET Transistor

The IXTH6N120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH6N120 transistor as follows.

Circuit diagram symbol of the IXTH6N120 transistor

IXTH6N120 Transistor Specification

Transistor Code IXTH6N120
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 1200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.4Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 150°C
Rise Time 850nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 56nC

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