IXTA12N50P MOSFET Transistor

The IXTA12N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA12N50P transistor as follows.

IXTA12N50P Transistor Specification

Transistor Code		IXTA12N50P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	200W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		29nC

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