IRFR3706PBF MOSFET Transistor

The IRFR3706PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR3706PBF transistor as follows.

IRFR3706PBF Transistor Specification

Transistor Code		IRFR3706PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	88W
Drain-Source Capacitance		1070pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		87nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		23nC

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