IRFR4105PBF MOSFET Transistor

The IRFR4105PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR4105PBF transistor as follows.

IRFR4105PBF Transistor Specification

Transistor Code		IRFR4105PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	68W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		49nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		34nC

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