FDD5810 MOSFET Transistor

The FDD5810 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD5810 transistor as follows.

FDD5810 Transistor Specification

Transistor Code		FDD5810
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	37A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	72W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		75nS
Gate-Threshold Voltage (Maximum)		2V

UXPython is not the creator or an official representative of the FDD5810 MOSFET transistor. You can download the official FDD5810 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FDD8586 MOSFET Transistor IRFR3411PBF MOSFET Transistor HUFA76429D3S MOSFET Transistor IRFR3706CPBF MOSFET Transistor HUF76429D3ST MOSFET Transistor HUFA76619D3S MOSFET Transistor HUF75617D3ST MOSFET Transistor HUF75829D3S MOSFET Transistor HUFA76407D3ST MOSFET Transistor HUFA75321D3ST MOSFET Transistor IRFR3707 MOSFET Transistor IRFR3806PBF MOSFET Transistor HUFA75617D3S MOSFET Transistor IRFR3709ZPBF MOSFET Transistor HUF75829D3ST MOSFET Transistor HUFA75829D3ST MOSFET Transistor IRFR3707PBF MOSFET Transistor IRFR3711ZCPBF MOSFET Transistor HUFA75617D3ST MOSFET Transistor IRFR3704PBF MOSFET Transistor