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IRFPE50PBF MOSFET Transistor

The IRFPE50PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPE50PBF transistor as follows.

Circuit diagram symbol of the IRFPE50PBF transistor

IRFPE50PBF Transistor Specification

Transistor Code IRFPE50PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247AC
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 190W
Drain-Source Capacitance 800pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 38nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 200nC

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