SIHG32N50D MOSFET Transistor

The SIHG32N50D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHG32N50D transistor as follows.

SIHG32N50D Transistor Specification

Transistor Code		SIHG32N50D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	390W
Drain-Source Capacitance		225pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		75nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		64nC

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