SIHFP260 MOSFET Transistor

The SIHFP260 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFP260 transistor as follows.

SIHFP260 Transistor Specification

Transistor Code		SIHFP260
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	46A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		1200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		230nC

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