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IRFNG50 MOSFET Transistor

The IRFNG50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFNG50 transistor as follows.

Circuit diagram symbol of the IRFNG50 transistor

IRFNG50 Transistor Specification

Transistor Code IRFNG50
Transistor Type MOSFET
Control Channel Type N-Channel
Package SMD1
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 240pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 44nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 200nC

UXPython is not the creator or an official representative of the IRFNG50 MOSFET transistor. You can download the official IRFNG50 MOSFET transistor datasheet to get more infromation about this transistor.

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