IRFN150SMD MOSFET Transistor

The IRFN150SMD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFN150SMD transistor as follows.

IRFN150SMD Transistor Specification

Transistor Code		IRFN150SMD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD1
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		1100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		190nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		125nC

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