IRFN5210 MOSFET Transistor

The IRFN5210 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFN5210 transistor as follows.

IRFN5210 Transistor Specification

Transistor Code		IRFN5210
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SMD1
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		790pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		180nC

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