IRF5N3205 MOSFET Transistor

The IRF5N3205 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5N3205 transistor as follows.

IRF5N3205 Transistor Specification

Transistor Code		IRF5N3205
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD1
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		1200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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