IRF7759L2TR1PBF MOSFET Transistor

The IRF7759L2TR1PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7759L2TR1PBF transistor as follows.

IRF7759L2TR1PBF Transistor Specification

Transistor Code		IRF7759L2TR1PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0023Ohm
Power Dissipation (Maximum)	PD	3.3W
Drain-Source Capacitance		1465pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		37nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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