IRF6717M MOSFET Transistor

The IRF6717M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6717M transistor as follows.

IRF6717M Transistor Specification

Transistor Code		IRF6717M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	220A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00125Ohm
Power Dissipation (Maximum)	PD	96W
Total Gate Charge		46nC

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