IRF6617 MOSFET Transistor

The IRF6617 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6617 transistor as follows.

IRF6617 Transistor Specification

Transistor Code		IRF6617
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0081Ohm
Power Dissipation (Maximum)	PD	42W
Operating Junction Temperature (Maximum)		150°C

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