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IRF3710ZS MOSFET Transistor

The IRF3710ZS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3710ZS transistor as follows.

Circuit diagram symbol of the IRF3710ZS transistor

IRF3710ZS Transistor Specification

Transistor Code IRF3710ZS
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 59A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 160W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 82nC

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