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CHM1825NGP MOSFET Transistor

The CHM1825NGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM1825NGP transistor as follows.

Circuit diagram symbol of the CHM1825NGP transistor

CHM1825NGP Transistor Specification

Transistor Code CHM1825NGP
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 90W
Drain-Source Capacitance 153pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 215nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 57nC

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