IRF242 MOSFET Transistor

The IRF242 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF242 transistor as follows.

IRF242 Transistor Specification

Transistor Code		IRF242
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		4V

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