SML801R2AN MOSFET Transistor

The SML801R2AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML801R2AN transistor as follows.

SML801R2AN Transistor Specification

Transistor Code		SML801R2AN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	198W
Drain-Source Capacitance		1800pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		105nC

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