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APT1001R2AN MOSFET Transistor

The APT1001R2AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT1001R2AN transistor as follows.

Circuit diagram symbol of the APT1001R2AN transistor

APT1001R2AN Transistor Specification

Transistor Code APT1001R2AN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 230W
Operating Junction Temperature (Maximum) 150°C

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