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Home » Electronics » FET » IPI60R099CPA Transistor

IPI60R099CPA MOSFET Transistor

The IPI60R099CPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI60R099CPA transistor as follows.

Circuit diagram symbol of the IPI60R099CPA transistor

IPI60R099CPA Transistor Specification

Transistor Code IPI60R099CPA
Transistor Type MOSFET
Control Channel Type N-Channel
Package PGTO262
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 31A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.105Ohm
Power Dissipation (Maximum) PD 255W
Total Gate Charge 80nC

IPI60R099CPA MOSFET Transistor Overview

The IPI60R099CPA is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a PGTO262 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IPI60R099CPA MOSFET

Followings are the key electrical characteristics of the IPI60R099CPA MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IPI60R099CPA MOSFET transistor is 600V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IPI60R099CPA MOSFET transistor is 31A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IPI60R099CPA MOSFET transistor when the transistor is fully turned on is 0.105 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IPI60R099CPA MOSFET transistor can comfortably transfer into heat without breaking is 255W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IPI60R099CPA MOSFET transistor is switched on is . This is the rate at which IPI60R099CPA MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the IPI60R099CPA MOSFET transistor. You can download the official IPI60R099CPA MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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