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IPI60R099CPA MOSFET Transistor

The IPI60R099CPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI60R099CPA transistor as follows.

Circuit diagram symbol of the IPI60R099CPA transistor

IPI60R099CPA Transistor Specification

Transistor Code IPI60R099CPA
Transistor Type MOSFET
Control Channel Type N-Channel
Package PGTO262
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 31A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.105Ohm
Power Dissipation (Maximum) PD 255W
Total Gate Charge 80nC

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