IPI100P03P3L-04 MOSFET Transistor

The IPI100P03P3L-04 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI100P03P3L-04 transistor as follows.

IPI100P03P3L-04 Transistor Specification

Transistor Code		IPI100P03P3L-04
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PGTO262
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0043Ohm
Power Dissipation (Maximum)	PD	200W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.1V

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