The IPI100N08S2-07 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the IPI100N08S2-07 transistor as follows.
Transistor Code | IPI100N08S2-07 | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | PGTO262 | |
Drain-Source Voltage (Maximum) | VDS | 75V |
Drain Current (Maximum) | ID | 100A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.0071Ohm |
Power Dissipation (Maximum) | PD | 300W |
Total Gate Charge | 200nC |
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