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IPI100N08S2-07 MOSFET Transistor

The IPI100N08S2-07 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI100N08S2-07 transistor as follows.

Circuit diagram symbol of the IPI100N08S2-07 transistor

IPI100N08S2-07 Transistor Specification

Transistor Code IPI100N08S2-07
Transistor Type MOSFET
Control Channel Type N-Channel
Package PGTO262
Drain-Source Voltage (Maximum) VDS 75V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0071Ohm
Power Dissipation (Maximum) PD 300W
Total Gate Charge 200nC

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