IPB123N10N3G MOSFET Transistor

The IPB123N10N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB123N10N3G transistor as follows.

IPB123N10N3G Transistor Specification

Transistor Code		IPB123N10N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	58A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0123Ohm
Power Dissipation (Maximum)	PD	94W
Total Gate Charge		26nC

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