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IPB029N06N3G MOSFET Transistor

The IPB029N06N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB029N06N3G transistor as follows.

Circuit diagram symbol of the IPB029N06N3G transistor

IPB029N06N3G Transistor Specification

Transistor Code IPB029N06N3G
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK_TO263
Drain-Source Voltage (Maximum) VDS 60V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0032Ohm
Power Dissipation (Maximum) PD 188W
Total Gate Charge 124nC

IPB029N06N3G MOSFET Transistor Overview

The IPB029N06N3G is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a D2PAK_TO263 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IPB029N06N3G MOSFET

Followings are the key electrical characteristics of the IPB029N06N3G MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IPB029N06N3G MOSFET transistor is 60V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IPB029N06N3G MOSFET transistor is 120A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IPB029N06N3G MOSFET transistor when the transistor is fully turned on is 0.0032 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IPB029N06N3G MOSFET transistor can comfortably transfer into heat without breaking is 188W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IPB029N06N3G MOSFET transistor is switched on is . This is the rate at which IPB029N06N3G MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the IPB029N06N3G MOSFET transistor. You can download the official IPB029N06N3G MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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