IPB080N06NG MOSFET Transistor

The IPB080N06NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB080N06NG transistor as follows.

IPB080N06NG Transistor Specification

Transistor Code		IPB080N06NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0077Ohm
Power Dissipation (Maximum)	PD	214W
Total Gate Charge		93nC

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