HY6N60T MOSFET Transistor

The HY6N60T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY6N60T transistor as follows.

HY6N60T Transistor Specification

Transistor Code		HY6N60T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		6N60T
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	86W
Drain-Source Capacitance		92pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18.8nS
Gate-Threshold Voltage (Maximum)		4V

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