IRFB3207PBF MOSFET Transistor

The IRFB3207PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB3207PBF transistor as follows.

IRFB3207PBF Transistor Specification

Transistor Code		IRFB3207PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	170A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		710pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		180nC

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