IRFB4620PBF MOSFET Transistor

The IRFB4620PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4620PBF transistor as follows.

IRFB4620PBF Transistor Specification

Transistor Code		IRFB4620PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0725Ohm
Power Dissipation (Maximum)	PD	144W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22.4nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		25nC

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