IRF5305PBF MOSFET Transistor

The IRF5305PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5305PBF transistor as follows.

IRF5305PBF Transistor Specification

Transistor Code		IRF5305PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		520pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		66nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		63nC

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