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H8205 MOSFET Transistor

The H8205 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H8205 transistor as follows.

Circuit diagram symbol of the H8205 transistor

H8205 Transistor Specification

Transistor Code H8205
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSOP6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.028Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 106pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9.95nS

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