The CEH2609 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the CEH2609 transistor as follows.
Transistor Code | CEH2609 | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | NP-Channel | |
Package | TSOP6 | |
Drain-Source Voltage (Maximum) | VDS | 20V |
Gate-Source Voltage (Maximum) | VGS | 12V |
Drain Current (Maximum) | ID | 3.5(2.5)A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.06(0.1)Ohm |
Power Dissipation (Maximum) | PD | 1.1W |
Drain-Source Capacitance | 90pF | |
Operating Junction Temperature (Maximum) | 150°C | |
Rise Time | 6(8)nS |
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