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CEH2321A MOSFET Transistor

The CEH2321A is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEH2321A transistor as follows.

Circuit diagram symbol of the CEH2321A transistor

CEH2321A Transistor Specification

Transistor Code CEH2321A
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSOP6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.055Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 140pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS

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