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FQU3N50C MOSFET Transistor

The FQU3N50C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU3N50C transistor as follows.

Circuit diagram symbol of the FQU3N50C transistor

FQU3N50C Transistor Specification

Transistor Code FQU3N50C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251_IPAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.5Ohm
Power Dissipation (Maximum) PD 35W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 10nC

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