FQU2N50B MOSFET Transistor

The FQU2N50B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU2N50B transistor as follows.

FQU2N50B Transistor Specification

Transistor Code		FQU2N50B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251_IPAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.3Ohm
Power Dissipation (Maximum)	PD	30W
Operating Junction Temperature (Maximum)		150°C

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