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FQU2N100 MOSFET Transistor

The FQU2N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU2N100 transistor as follows.

Circuit diagram symbol of the FQU2N100 transistor

FQU2N100 Transistor Specification

Transistor Code FQU2N100
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251_IPAK
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 9Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 12nC

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