FQU2N100 MOSFET Transistor

The FQU2N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU2N100 transistor as follows.

FQU2N100 Transistor Specification

Transistor Code		FQU2N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251_IPAK
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	9Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		12nC

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