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FQU2N100 MOSFET Transistor

The FQU2N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU2N100 transistor as follows.

Circuit diagram symbol of the FQU2N100 transistor

FQU2N100 Transistor Specification

Transistor Code FQU2N100
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251_IPAK
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 9Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 12nC

FQU2N100 MOSFET Transistor Overview

The FQU2N100 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO251_IPAK package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the FQU2N100 MOSFET

Followings are the key electrical characteristics of the FQU2N100 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in FQU2N100 MOSFET transistor is 1000V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the FQU2N100 MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the FQU2N100 MOSFET transistor is 1.6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of FQU2N100 MOSFET transistor when the transistor is fully turned on is 9 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the FQU2N100 MOSFET transistor can comfortably transfer into heat without breaking is 50W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the FQU2N100 MOSFET transistor is switched on is . This is the rate at which FQU2N100 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FQU2N100 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of FQU2N100 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the FQU2N100 MOSFET transistor. You can download the official FQU2N100 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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