The FQU2N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the FQU2N100 transistor as follows.
|Control Channel Type
|Drain-Source Voltage (Maximum)
|Gate-Source Voltage (Maximum)
|Drain Current (Maximum)
|Drain-Source On-State Resistance (Maximum)
|Power Dissipation (Maximum)
|Operating Junction Temperature (Maximum)
|Total Gate Charge
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