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FQD5P20TF MOSFET Transistor

The FQD5P20TF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD5P20TF transistor as follows.

Circuit diagram symbol of the FQD5P20TF transistor

FQD5P20TF Transistor Specification

Transistor Code FQD5P20TF
Transistor Type MOSFET
Control Channel Type P-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 10nC

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