FQD4N20LTM MOSFET Transistor

The FQD4N20LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD4N20LTM transistor as follows.

FQD4N20LTM Transistor Specification

Transistor Code		FQD4N20LTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.35Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		36pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		4nC

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